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BD743C Dataheets PDF



Part Number BD743C
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Silicon NPN Power Transistors
Datasheet BD743C DatasheetBD743C Datasheet (PDF)

SEMICONDUCTORS BD743 – A – B – C SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD74.

  BD743C   BD743C



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SEMICONDUCTORS BD743 – A – B – C SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C TC = 25°C TA = 25°C Value 50 70 900 110 45 60 80 100 5 Unit VCBO Collector-Base Voltage (IE=0) V www.DataSheet.net/ VCEO Collector-Emitter Voltage (IB=0) V VEBO Emitter-Base Voltage (IC=0) V IC Collector Current 15 A ICM Collector Peak Current 20 A IB Base Current 5 90 2 150 -65 to +150 A PT TJ Ts Power Dissipation Junction Temperature Storage Temperature range W °C 25/09/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD743 – A – B – C THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance Value 1.4 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current ICEO Collector Cutoff Current VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V IB= 0 VCE = 30 V IB= 0 VCE = 60 V BD743 BD743A TC= 25°C BD743B www.DataSheet.net/ - - 0.1 mA BD743C BD743 TC= 125°C BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C 5 mA - - 0.1 mA IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 45 60 80 100 - 0.5 - mA VCEO Collector-Emitter Breakdown Voltage IC= 30 mA, IB= 0 (*) V 25/09/2012 COMSET SEMICONDUCTORS 2|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD743 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C Value Unit IC= 5 A, IB= 500 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 15 A, IB=5 A - - 1 V - - 3 IC= 5 A, VCE= 4 V - - 1 V VBE(on) Base-Emitter Voltage (*) IC= 15 A, VCE= 4 V www.DataSheet.net/ - - 3 V IC= 1 A, VCE= 4 V 40 - - hFE DC Current Gain (*) IC= 5 A, VCE= 4 V 20 - 150 - IC= 15 A, VCE= 4 V 5 - - SWITCHING TIMES Symbol td tr ts tf Ratings Delay time Rise time Storage time Fall time Test Condition(s) Min IC= 5 A, Vbe= -4.2 V IB(on) = -IB(off) = 0.5 A RL = 6 Ω, tp = 20µs - Value Typ 20 350 500 400 Unit Max ns (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 25/09/2012 COMSET SEMICONDUCTORS 3|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICON.


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