Document
SEMICONDUCTORS
BD743 – A – B – C SILICON POWER TRANSISTORS
The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C TC = 25°C TA = 25°C
Value
50 70 900 110 45 60 80 100 5
Unit
VCBO
Collector-Base Voltage (IE=0)
V
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VCEO
Collector-Emitter Voltage (IB=0)
V
VEBO
Emitter-Base Voltage (IC=0)
V
IC
Collector Current
15
A
ICM
Collector Peak Current
20
A
IB
Base Current
5 90 2 150 -65 to +150
A
PT TJ Ts
Power Dissipation Junction Temperature Storage Temperature range
W °C
25/09/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD743 – A – B – C
THERMAL CHARACTERISTICS Symbol
RthJ-MB RthJ-A
Ratings
Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance
Value
1.4 62.5
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V IB= 0 VCE = 30 V IB= 0 VCE = 60 V
BD743 BD743A TC= 25°C BD743B
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-
-
0.1
mA
BD743C BD743
TC= 125°C
BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C 5 mA
-
-
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5 V, IC= 0
45 60 80 100
-
0.5 -
mA
VCEO
Collector-Emitter Breakdown Voltage IC= 30 mA, IB= 0 (*)
V
25/09/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD743 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
BD743 BD743A BD743B BD743C BD743
BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C
Value
Unit
IC= 5 A, IB= 500 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 15 A, IB=5 A
-
-
1 V
-
-
3
IC= 5 A, VCE= 4 V
-
-
1
V
VBE(on)
Base-Emitter Voltage (*) IC= 15 A, VCE= 4 V
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-
-
3
V
IC= 1 A, VCE= 4 V
40
-
-
hFE
DC Current Gain (*)
IC= 5 A, VCE= 4 V
20
-
150
-
IC= 15 A, VCE= 4 V
5
-
-
SWITCHING TIMES Symbol
td tr ts tf
Ratings
Delay time Rise time Storage time Fall time
Test Condition(s) Min
IC= 5 A, Vbe= -4.2 V IB(on) = -IB(off) = 0.5 A RL = 6 Ω, tp = 20µs -
Value Typ
20 350 500 400
Unit Max
ns
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
25/09/2012
COMSET SEMICONDUCTORS
3|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICON.