BD896

SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD895 - BD897 - BD899 - BD901 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 Tc = 25° Ta = 25° Value -45 -60 -80 -100 -45 -60 -80 -100 -5 Unit VCBO Collector-Base Voltage V www.DataSheet.net/ VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage V IC Collector Current -8 A IB Base Current -300 mA PT TJ Ts Power Dissipation Junction Temperature Storage Temperature range 70 2 150 -65 to +150 Watts °C 25/09/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD896 – BD898 – BD900 – BD902 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=25°C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0 VCB = -45 V IE= 0 VCB = -60 V TC=100° C IE= 0 VCB = -80 V IE= 0 VCB = -100 V IE= 0, VCE = - 30 V IE= 0, VCE = - 30 V IE= 0, VCE = - 40 V IE= 0, VCE = - 50 V www.DataSheet.net/ Min Typ Max Unit BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD896 BD898 BD900 BD902 BD...