isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustainin...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·Complement to Type BD910 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Current
5
PC
Collector Power Dissipation @ TC=25℃
90
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.38 ℃/W
BD909
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Cur...