isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDT65/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT64
-60
VCER
Collector-Emitter Voltage
BDT64A BDT64B
-80 -100
BDT64C
-120
BDT64
-60
VCEO
Collector-Emitter Voltage
BDT64A BDT64B
-80 -100
BDT64C
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-12
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-0.5
PC
Collector Power Dissipation @ TC=25℃
125
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1 ℃/W
BDT64/A/B/C
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isc Silicon
PNP Darlington Power
Transistor
BDT64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT64
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT64A BDT64B
IC= -30mA ;IB=0
-80 -100
V
BDT64C
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
-3.0 V
VBE(on) Base-Emitt...