BDT64A

SEMICONDUCTORS BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT65-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C Value -60 -80 -100 -120 -60 -80 -100 -120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage -5 V IC Collector Current -12 A ICM Collector Peak Current -20 A 26/09/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Rthj-c Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT64-A-B-C ELECTRIC...