CGH40120F

CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Type s: 440193 PN: CGH4012 0F FEATURES Up to 2.5 GHz Operation 20 dB Small Signal Gain at 1.0 GHz 15 dB Small Signal Gain at 2.0 GHz 120 W Typical PSAT 70 % Efficiency at PSAT 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure www.DataSheet.net/ Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms il 2012 Rev 2.5 – Apr Subject to change without notice. www.cree.com/wireless 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature 3,4 Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS Rating 84 -10, +2 -65, +150 225 30 12 245 80 1.5 -40, +150 Units Volts Volts ˚C ˚C mA A ˚C in-...