KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect trans...
KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect
transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
2. Features
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating
www.DataSheet.net/
3. Pin configuration
Pin 1 2 3 4
Function Gate Drain Source Drain
1 of 7
Datasheet pdf - http://www.DataSheet4U.co.kr/
KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
4. Absolute maximum ratings
Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Tc=25 ºC Power dissipation derate above 25 ºC Operating and Storage temperature range Maximum lead temperature for soldering purposes,1/8’’ from case for 5 seconds
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ...