TTA0002
TOSHIBA Transistor Silicon PNP Triple Diffused Type
TTA0002
○ Power Amplifier Applications
• • • High collector...
TTA0002
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
TTA0002
○ Power Amplifier Applications
High collector voltage: VCEO = -160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -160 -160 -5 -18 -35 -9 180 150 −55 to 150
www.DataSheet.net/
Unit V V V A A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2009-06-11
Datasheet pdf - http://www.DataSheet4U.co.kr/
TTA0002
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown volta...