BDT84

      PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 -60 -80 -100 -120 -60 -80 -100 -120 -7 -15 -20 -4 125 150 -65 to +150 Unit VCEO Collector-Emitter Voltage -IB = 0 V VCBO VEBO IC ICM IB Pt TJ TStg Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature -IE = 0 -IC = 0 V V A A A W °C °C @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJa RthJmb Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base COMSET SEMICONDUCTORS Value 70 1 Unit K/W K/W 1|4 09/11/2012   Datasheet pdf - http://www.DataSheet4U.co.kr/       PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = -100 V IE=0A, VCB = -120 V VBE=0, VCE = -60V VBE=0, VCE = -80V VBE=0, VCE = -100V VBE=0, VCE = -120V VEB= -7 V IC=0 www.DataSheet.net/ Min Typ Max Unit ICB0 Collector Cutoff Current ICES Collector Cutoff Current IEBO Emitter Cutoff Current...