BDV65-A-B-C
NNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Th...
BDV65-A-B-C
NNP SILICON DARLINGTONS POWER
TRANSISTORS
They are silicon epitaxial base
transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C
Value
60 80 100 120 60 80 100 120 5.0
Unit
VCEO
Collector-Emitter Voltage
www.DataSheet.net/
V
VCBO
Collector-Base Voltage
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
12 A 15
ICM
Collector Peak Current
IB
Base Current
0.5
A
26/09/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV65-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C
Value
Unit
Tmb = 25° C PT Power Dissipation Tmb = 25° C
125 Watts 3.5
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
www.DataSheet.net/
THERMAL CHARACTERISTICS Symbol Ratings
BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C
Value
Unit
Rthj-c
Thermal Resistance, Junction to Case
1 °C / W 35.7
Rthj-a
Thermal Resistance, Junction to Ambient
26/09/2012
COMSET SEMICONDUCTORS
2/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
S...