BDV66-A-B-C PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV67-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO Collector-Emitter Voltage
Ratings
BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C
Value
-80 -100 -120 -140 -80 -100 -120 -140 -5.0
Unit
V
VCBO
Collector-Base Voltage
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V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
-16 A -20
ICM
Collector Peak Current
IB
Base Current
-0.5
A
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BDV66-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C
Value
Unit
PT
Power Dissipation
Tmb = 25° C
175
Watts
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
Rthj-c
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Ratings
Thermal Resistance, Junction to Case
Value
0.625
Unit
°C / W
SWITCHING TIMES Symbol
ton toff
Ratings
turn-on time turn-off time
Test Condition(s) Min
IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA -
Value Typ
1 3.5
Unit Max
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
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BDV66-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICEO
Collector Cutoff Current
VCE= -40 V, IB= 0 VCE= -50 V, IB= 0 VCE= -60 V, IB= 0 VCE= -70 V, IB= 0 VBE= -5 V, IC= 0 VCB= -80 V VCB= -100 V VCB= -120 V VCB= -140 V VCB= -40 V VCB= -50 V VCB= -60 V VCB= -70 V
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IEBO
Emitter Cutoff Current
ICBO
Collector Cutoff Current
IE= 0 Tj=25°C
IE= 0 Tj=150°C Collector-Emitter Breakdown Voltage (*)
VCEO
IC= -100 mA, IB = 0
hFE
DC Current Gain (*)
VCE= -3 V, IC= -10 A
VCE(SAT)
Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -40 mA
VBE
Base-Emitter Voltage(*)
VCE= -3 V, IC= -10 A
COB
Output Capacitance
VCB= -10 V, IE= 0 ftest= 1 MHz
BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C BDV66 BDV66A BDV66B BDV66C
-
-
-1
mA
-
-
-5
mA
-
-
-1 mA
-60 -80 -100 -120 1000
-
-5 V
-
-
-
-2
V
-
-
-2,5
V
-
300
-
pF
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BDV66-A-B-C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Collector
0.35 5.35 20.00 19.60 0.95
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4.80
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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