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BDV67B Dataheets PDF



Part Number BDV67B
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description NPN SILICON DARLINGTONS POWER TRANSISTORS
Datasheet BDV67B DatasheetBDV67B Datasheet (PDF)

BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV.

  BDV67B   BDV67B


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BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D Value 60 80 100 120 150 80 100 120 140 160 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage 5.0 V IB Base Current 0.5 A IC Collector Current 16 A 20 ICM 26/09/2012 COMSET SEMICONDUCTORS 1/5 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV67-A-B-C-D ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D www.DataSheet.net/ Value Unit PT Power Dissipation @ Tmb = 25° C 200 W TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base Value 0.625 Unit °C / W SWITCHING TIMES Symbol ton toff Ratings turn-on time turn-off time Test Condition(s) IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA Min - Typ 1 3.5 Max - Unit µs 26/09/2012 COMSET SEMICONDUCTORS 2/5 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV67-A-B-C-D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min 60 80 100 120 150 1000 - Typ 3000 1000 Mx Unit ICEO Collector Cutoff Current VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 VCE= 60 V, IB= 0 VCE= 75 V, IB= 0 IEBO Emitter Cutoff Current VBE= 5 V, Ic= 0 ICBO Collector-Base Cutoff Current VCB= 80 V VCB= 100 V IB= 0 VCB= 120 V Tj=25°C VCB= 140 V VCB= 160 V VCB= 40 V VCB= 50 V IB= 0 Tj=150° VCB= 60 V C VCB= 70 V VCB= 80 V www.DataSheet.net/ VCEO Collector-emitter I = 30 mA, IB= 0 Breakdown Voltage (*) C VCE= 3 V, IC= 1 A hFE DC Current Gain (*) VCE= 3 V, IC= 10 A VCE= 3 V, IC= 16 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 10 A, IB= 40 mA BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D 1 mA 5.0 mA 1 mA 4 - V - - - 2 V 26/09/2012 COMSET SEMICONDUCTORS 3/5 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV67-A-B-C-D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D Min Typ Max Unit VBE Base-Emitter Voltage (*) VCE= 3 V, IC= 10 A - - 2,5 V VF Diode forward voltage IF= 10 A - - 3 V Cc Collector capacitance IE= 0 A, VCB= 10 V f= 1 MHz www.DataSheet.net/ - 300 - pF (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 26/09/2012 COMSET SEMICONDUCTORS 4/5 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDV67-A-B-C-D MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Collector 0.35 5.35 20.00 19.60 0.95 www.DataSheet.net/ 4.80 Revised August 2012             Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.     www.comsetsemi.com 26/09/2012 COMSET SEMICONDUCTORS [email protected] 5/5 Datasheet pdf http://www.DataSheet4U.co.kr/ .


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