BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
Value
60 80 100 120 150 80 100 120 140 160
Unit
VCEO
Collector-Emitter Voltage
V
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VCBO
Collector-Base Voltage
V
VEBO
Emitter-Base Voltage
5.0
V
IB
Base Current
0.5
A
IC
Collector Current
16 A 20
ICM
26/09/2012
COMSET SEMICONDUCTORS
1/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
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Value
Unit
PT
Power Dissipation
@ Tmb = 25° C
200
W
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base
Value
0.625
Unit
°C / W
SWITCHING TIMES Symbol
ton toff
Ratings
turn-on time turn-off time
Test Condition(s)
IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA
Min
-
Typ
1 3.5
Max
-
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
60 80 100 120 150 1000 -
Typ
3000 1000
Mx
Unit
ICEO
Collector Cutoff Current
VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 VCE= 60 V, IB= 0 VCE= 75 V, IB= 0
IEBO
Emitter Cutoff Current
VBE= 5 V, Ic= 0
ICBO
Collector-Base Cutoff Current
VCB= 80 V VCB= 100 V IB= 0 VCB= 120 V Tj=25°C VCB= 140 V VCB= 160 V VCB= 40 V VCB= 50 V IB= 0 Tj=150° VCB= 60 V C VCB= 70 V VCB= 80 V
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VCEO
Collector-emitter I = 30 mA, IB= 0 Breakdown Voltage (*) C VCE= 3 V, IC= 1 A
hFE
DC Current Gain (*)
VCE= 3 V, IC= 10 A VCE= 3 V, IC= 16 A
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC= 10 A, IB= 40 mA
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
1
mA
5.0
mA
1 mA 4
-
V
-
-
-
2
V
26/09/2012
COMSET SEMICONDUCTORS
3/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
Min
Typ
Max
Unit
VBE
Base-Emitter Voltage (*)
VCE= 3 V, IC= 10 A
-
-
2,5
V
VF
Diode forward voltage
IF= 10 A
-
-
3
V
Cc
Collector capacitance
IE= 0 A, VCB= 10 V f= 1 MHz
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-
300
-
pF
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012
COMSET SEMICONDUCTORS
4/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter Collector
0.35 5.35 20.00 19.60 0.95
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4.80
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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26/09/2012 COMSET SEMICONDUCTORS
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