BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial base transistors mounted in TO-3PN. T...
BDV67-A-B-C-D
NPN SILICON DARLINGTONS POWER
TRANSISTORS
They are silicon epitaxial base
transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV66-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
Value
60 80 100 120 150 80 100 120 140 160
Unit
VCEO
Collector-Emitter Voltage
V
www.DataSheet.net/
VCBO
Collector-Base Voltage
V
VEBO
Emitter-Base Voltage
5.0
V
IB
Base Current
0.5
A
IC
Collector Current
16 A 20
ICM
26/09/2012
COMSET SEMICONDUCTORS
1/5
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDV67-A-B-C-D
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D BDV67 BDV67A BDV67B BDV67C BDV67D
www.DataSheet.net/
Value
Unit
PT
Power Dissipation
@ Tmb = 25° C
200
W
TJ
Junction Temperature
150 °C -65 to +150
TS
Storage Temperature
THERMAL CHARACTERISTICS Symbol
RthJ-mb
Ratings
Thermal Resistance, Junction to Mounting Base
Value
0.625
Unit
°C / W
SWITCHING TIMES Symbol
ton toff
Ratings
turn-on time turn-off time
Test Condition(s)
IC= 10 A , VCC= 12 V IB1 = -IB2 = 40 mA
Min
-
Typ
1 3.5
Max
-
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/5
Datasheet pdf - http://www.DataSheet4U.co.k...
