BDW83C

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C www.DataSheet.net/ SYMBOL VALUE 45 60 UNIT V CBO 80 100 120 45 60 V VCEO 80 100 120 V BDW83D VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of:...