BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDW84, BDW84...
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current
C B
SOT-93 PACKAGE (TOP VIEW) 1
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2
Minimum hFE of 750 at 3V, 6 A
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C
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SYMBOL
VALUE 45 60
UNIT
V CBO
80 100 120 45 60
V
VCEO
80 100 120
V
BDW83D VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA
Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4.
5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150
V A A W W mJ °C °C °C
These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the
transistor to operate safely in a circuit of:...