NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base NPN...
NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D,
NPN SILICON DARLINGTONS POWER
TRANSISTORS
They are silicon epitaxial-base
NPN power monolithic Darlington
transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D
Value
45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
IB = 0
www.DataSheet.net/
V
VCBO
Collector- Emitter Voltage
IE = 0 IC = 0
V
VEBO IC IB Pt TJ TStg
Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature
V A A W °C °C
25°C case temperatur 25°C free aire temperatur
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Value
0.83 35.7
Unit
°C/W
Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW83 BDW83A IC=30 mA BDW83B IB=0 BDW83C BDW83D BDW83 IB=0, VCE=30 V IB=0, VCE=30 V BDW83A IB=0, VCE=40 V BDW83B IB=0, VCE=50 V BDW83C IB=0, VCE=60 V BDW83D IE= 0, VCB=45 V BDW83 IE= 0, VCB=60 V BDW83A IE= 0, VCB=80 V BDW83B IE= 0, VCB=100 V BDW83C IE...
