BDX33C

NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings www.DataSheet.net/ Value BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150 Unit VCEO Collector-Emitter Voltage IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) ICM @ TC = 25° V IC IB PT TJ TS Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.78 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDX33 – BDX33A – BDX33B – BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C Min 45 60 80 100 45 60 80 100 45 60 80 100 - Typ - Max 0.5 Unit VCEO(SUS) IC=100 mA V ...