isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min...
isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VCBO
Collector-Base Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.15
A
90
W
200
℃
Tstg
Storage Temperature Range
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.94 ℃/W
BDX62/A/B/C
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isc Silicon
PNP Darlington Power
Transistor
BDX62/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX62
-60
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX62A BDX62B
IC= -30mA ;IB=0
-80 -100
V
BDX62C
-120
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2
V
VBE(on) ICEO
Base-Emitter On Voltage Collector Cutoff Current
IC= -3A ; VCE= ...