BDX66

BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX67, BDX67A, BDX67B, BDX67C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Value 60 80 100 120 60 80 100 120 5.0 16 20 0.25 150 -55 to +200 Unit -VCEO Collector-Emitter Voltage www.DataSheet.net/ V -VCBO -VEBO -IC -IB PT TJ TS Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature -IC(RMS) -ICM @ TC = 25° V V A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 24/10/2012 COMSET SEMICONDUCTORS 1/4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX66 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A Min 60 80 100 120 - Typ 2000 Max 3 Unit -VCEO(SUS) Collector-Emitter Breakdown -IC=0.1 A L=25mH Voltage (*) -VCE=30 V -VCE=40 V -VCE=50 V -VCE=60 V -VBE=5 V -VCB=60 V -VCB=40 V TCASE=200°C -VCB=80 V -VCB=50 V TCASE=200°C www.DataSheet.net/ V -ICEO Collector Cutoff Current mA -IEBO Emitter Cutoff Current 5.0 1 5 1 5 1 5 1 5 mA -ICBO Collector-Base Cutoff ...