BDX66 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 meta...
BDX66 – A – B – C
PNP SILICON DARLINGTON POWER
TRANSISTOR
The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary
NPN are BDX67, BDX67A, BDX67B, BDX67C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C
Value
60 80 100 120 60 80 100 120 5.0 16 20 0.25 150 -55 to +200
Unit
-VCEO
Collector-Emitter Voltage
www.DataSheet.net/
V
-VCBO -VEBO -IC -IB PT TJ TS
Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature -IC(RMS) -ICM @ TC = 25°
V V A A W °C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX66 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A
Min
60 80 100 120 -
Typ
2000
Max
3
Unit
-VCEO(SUS)
Collector-Emitter Breakdown -IC=0.1 A L=25mH Voltage (*) -VCE=30 V -VCE=40 V -VCE=50 V -VCE=60 V -VBE=5 V -VCB=60 V -VCB=40 V TCASE=200°C -VCB=80 V -VCB=50 V TCASE=200°C
www.DataSheet.net/
V
-ICEO
Collector Cutoff Current
mA
-IEBO
Emitter Cutoff Current
5.0 1 5 1 5 1 5 1 5
mA
-ICBO
Collector-Base Cutoff ...