BDY56

BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature www.DataSheet.net/ Value BDY55 BDY56 BDY55 BDY56 60 120 100 150 7 15 7 117 200 -65 to +200 Unit V V V A A W °C @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDY55 – BDY56 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO IEBO Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Test Condition(s) IC = 200 mA IB = 0 VCE = 30 V VCE = 60 V VEB = 7 V VCE = 100 V VBE = -1.5 V VCE = 100 V VBE = -1.5 V TCASE = 150°C VCE = 150 V VBE = -1.5 V VCE = 150 V VBE = -1.5 V TCASE = 150°C IC = 4.0 A IB = 0.4 A IC = 10 A IB = 3.3 A IC = 10 A IB = 3.3 A IC = 4.0 A VCE = 4.0 V VCE = 4 V IC = 4 A VCE = 4 V IC =10 A VCE = 4.0 V IC = 1.0 A, f = 10 MHz IC = 5 A IB = 1 A IC = 5 A IB1 = 1 A IB2 = -0.5 A www.DataSheet.net/ Min 60 120 - Typ - Max 0.7 0.5 5 3 5 30 Unit V mA mA BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BDY56 BDY55 BD...