2N6284 (NPN); 2N6286, 2N6287 (PNP)
Preferred Device
Darlington Complementary Silicon Power Transistors
These packages ar...
2N6284 (
NPN); 2N6286, 2N6287 (
PNP)
Preferred Device
Darlington Complementary Silicon Power
Transistors
These packages are designed for general−purpose amplifier and low−frequency switching applications.
Features
High DC Current Gain @ IC = 10 Adc −
hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
Monolithic Construction with Built−In Base−Emitter Shunt Resistors Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage 2N6286
VCEO
80
Vdc
2N6284/87
100
Collector−Base Voltage
VCB
Vdc
2N6286
80
2N6284/87
100
Emitter−Base Voltage Collector Current − Continuous
Peak
VEB 5.0 Vdc
IC
20 Adc 40
Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
IB PD
0.5 160 0.915
Adc W W/°C
Operating and Storage Temperature Range
TJ, Tstg − 65 to + 200
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
1.09 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Technique...
