Document
NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature
www.DataSheet.net/
Ratings
BDY57 BDY58 BDY57 BDY58
Value
80 125 120 160 10 25 6 175 -65 to +200
Unit
V V V A A W °C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICER IEBO VCE(SAT)
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage (*) Emitter-Base Breakdown Voltage (*) Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter saturation Voltage (*)
Test Condition(s)
IC=100 mA, IB=0 IC=5.0mA, IE=0 IE=5.0 A, IC=0 VCB=120 V, IE=0 V VCE=80 V, RBE=10 TCASE=100°C VEB=10 V, IC=0 V
www.DataSheet.net/
Min
80 125 120 160 20 10 10 -
Typ
0.5 0.25 0.5 15 30 0.25 1
Max Unit
1.4 1.0 0.5 10 0.5 1.4 60 1 2 MHz µs µs V V V V mA mA mA V
IC=10 A, IB=1.0 A VCE=4 V, IC=10 A
h21E
Static Forward Current transfer ratio (*)
VCE=4 V, IC=20 A VCE=4 V, IC=10 A TCASE=-30°C VCE=15 V, IC=1.0 A f=10 MHz IC=15 A, IB=1.5 A IC=15 A, IB1=1.5 A IB2=-1.5 A
fT td + tr ts + tf
Transition Frequency Turn-on time Turn-off time
BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
09/11/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDY57 – BDY58
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm) min A B C D E G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 3.84 38.50 29.90 typ max 13.10 1.15 1.65 8.92 22 11.1 17.20 27,20 4.21 40.13 30.40
www.DataSheet.net/
Pin 1 : Pin 2 : Case :
Base Emitter Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for us.