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BDY58 Dataheets PDF



Part Number BDY58
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (BDY57 / BDY58) NPN SILICON TRANSISTORS
Datasheet BDY58 DatasheetBDY58 Datasheet (PDF)

NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature www.DataSheet.net/ Ratings BDY57 BDY58 BDY57 BDY58 Value 80 125 120 1.

  BDY58   BDY58



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NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC IB PTOT TJ TS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @ TC = 25° Junction Temperature Storage Temperature www.DataSheet.net/ Ratings BDY57 BDY58 BDY57 BDY58 Value 80 125 120 160 10 25 6 175 -65 to +200 Unit V V V A A W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W 09/11/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDY57 – BDY58 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) V(BR)CBO V(BR)EBO ICBO ICER IEBO VCE(SAT) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage (*) Emitter-Base Breakdown Voltage (*) Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter saturation Voltage (*) Test Condition(s) IC=100 mA, IB=0 IC=5.0mA, IE=0 IE=5.0 A, IC=0 VCB=120 V, IE=0 V VCE=80 V, RBE=10 TCASE=100°C VEB=10 V, IC=0 V www.DataSheet.net/ Min 80 125 120 160 20 10 10 - Typ 0.5 0.25 0.5 15 30 0.25 1 Max Unit 1.4 1.0 0.5 10 0.5 1.4 60 1 2 MHz µs µs V V V V mA mA mA V IC=10 A, IB=1.0 A VCE=4 V, IC=10 A h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=20 A VCE=4 V, IC=10 A TCASE=-30°C VCE=15 V, IC=1.0 A f=10 MHz IC=15 A, IB=1.5 A IC=15 A, IB1=1.5 A IB2=-1.5 A fT td + tr ts + tf Transition Frequency Turn-on time Turn-off time BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 BDY57 BDY58 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 09/11/2012 COMSET SEMICONDUCTORS 2|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDY57 – BDY58 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D E G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 3.84 38.50 29.90 typ max 13.10 1.15 1.65 8.92 22 11.1 17.20 27,20 4.21 40.13 30.40 www.DataSheet.net/ Pin 1 : Pin 2 : Case : Base Emitter Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for us.


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