BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
• • • SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY...
BFX89 – BFY90 WIDE BAND VHF/UHF AMPLIFIER
DESCRIPTION :
SILICON PLANAR EPITAXIAL
TRANSISTORS TO-72 METAL CASE VERY LOW NOISE
APPLICATIONS :
TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS
The BFX89 and BFY90 are silicon planar epitaxial
NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment.
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCER VCBO VEBO IC ICM Ptot Tstg, Tj
Ratings
Collector-Emitter Voltage ( IB = 0) Collector-Emitter Voltage ( RBE ≤50Ω ) Collector-Base Voltage ( IE= 0) Collector-Base Voltage ( IC = 0) Collector Current Collector Peak Current Total Power Dissipation at Tamb ≤ 25 °C Storage and Junction Temperature
Value
15 30 30 2.5 25 50 200 -65 to 200
Unit
V V V V mA mA mW °C
25/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BFX89 – BFY90
THERMAL CHARACTERISTICS Symbol
RthJ-C RthJ-
Ratings
Thermal Resistance, Junction – Case Thermal Resistance, Junction – ambient Max Max
Value
580 880
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Symbol
ICBO VCEK*
Ratings
Collector Cutoff Current (IE=0) Col...