NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS
They are PNP transistors mounted in TO-39 metal package. They ar...
NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL
TRANSISTORS
They are
PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving .
NPN complements are the BSS50A – 51A – 52A . Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO Collector-Base Voltage
www.DataSheet.net/
Ratings
BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A
Value
60 80 90 45 60 80 5 1 2 0.1 5 0.8 200 -65 to +150
Unit
V
VCES VEBO IC IB Ptot TJ TStg
Collector-Emitter Voltage VBE = 0 Emitter-Base Voltage Collector Current Base Current IC ICM
V V A A W °C °C
@ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-c RthJ-amb
Ratings
Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient
Value
35 220
Unit
K/ W K/ W
ELECTRICAL CHARACTERISTICS
COMSET SEMICONDUCTORS 1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BSS60A-61A-62A
TC=25°C unless otherwise noted
Symbol
-ICBO
Ratings
Collector Cutoff Current Emitter Cutoff Current
Test Condition(s)
IE= 0, -VCB= 45V IE= 0, -VCB= 60V IE= 0, -VCB= 80V IC= 0, -VEB=4 V BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A
Min
-
Typ
-
Max
50
Unit
nA
-IEB0
800
-
700 1.3 1.3 1.6 1.6 1.6 1.6 1.9 2.2 2.2 -
µA
-VCE(SAT)
Collector-Emitter saturation Voltage
-VBE(SAT)
Base-Emitter saturation Voltage
hFE
DC Current Gain
hfe ton toff ton toff
Small Signal Current Gain Switching times Switching tim...