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BSS62A

Comset Semiconductors

(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS

NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They ar...


Comset Semiconductors

BSS62A

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Description
NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A – 51A – 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage www.DataSheet.net/ Ratings BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A Value 60 80 90 45 60 80 5 1 2 0.1 5 0.8 200 -65 to +150 Unit V VCES VEBO IC IB Ptot TJ TStg Collector-Emitter Voltage VBE = 0 Emitter-Base Voltage Collector Current Base Current IC ICM V V A A W °C °C @ Tcase= 25° @ Tamb= 25° Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 35 220 Unit K/ W K/ W ELECTRICAL CHARACTERISTICS COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BSS60A-61A-62A TC=25°C unless otherwise noted Symbol -ICBO Ratings Collector Cutoff Current Emitter Cutoff Current Test Condition(s) IE= 0, -VCB= 45V IE= 0, -VCB= 60V IE= 0, -VCB= 80V IC= 0, -VEB=4 V BSS60A BSS61A BSS62A BSS60A BSS61A BSS62A Min - Typ - Max 50 Unit nA -IEB0 800 - 700 1.3 1.3 1.6 1.6 1.6 1.6 1.9 2.2 2.2 - µA -VCE(SAT) Collector-Emitter saturation Voltage -VBE(SAT) Base-Emitter saturation Voltage hFE DC Current Gain hfe ton toff ton toff Small Signal Current Gain Switching times Switching tim...




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