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BUW13A Dataheets PDF



Part Number BUW13A
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description High Speed Power Transistor
Datasheet BUW13A DatasheetBUW13A Datasheet (PDF)

NPN BUW13 - BUW13A HIGH VOLTAGE, HIGH SPEED POWER TRANSISTOR The BUW13-A are silicon NPN power transistor in TO3PN package. They are intended for use in switching regulators, motor control systems, inverters and converters. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Power Dissipation Junctio.

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NPN BUW13 - BUW13A HIGH VOLTAGE, HIGH SPEED POWER TRANSISTOR The BUW13-A are silicon NPN power transistor in TO3PN package. They are intended for use in switching regulators, motor control systems, inverters and converters. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 Value BUW13 400 850 www.DataSheet.net/ BUW13A 450 1000 Unit V V V A A A A Watts °C °C @ TC = 25° 9 15 30 6 9 175 150 -65 to 175 THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 0.7 Unit °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUW13 - BUW13A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) Ratings Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain Test Condition(s) IC= 100 mA , IB= 0 A L= 25 mH VCE= VCEMax VBE= 0 V VCE= VCEMax, VBE= 0 V Tcase = 125°C VEB= 9 V, IC= 0 A IC= 10 A , IB= 2 A IC= 8 A , IB= 1.6 A IC= 10 A , IB= 2 A IC= 8 A , IB= 1.6 A IC=20 mA , VCE=5 V www.DataSheet.net/ Min 400 450 10 10 Typ - Mx 1 Unit V ICES IEBO VCE(SAT) VBE(SAT) hFE IC=1.5 A , VCE=5 V SWITCHING TIMES BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A BUW13 BUW13A mA 4 10 1.5 V 1.6 35 35 mA Symbol ton ts tf Ratings Turn-on time Storage time File time Test Condition(s) For BUW13 IC= 10 A , IB1 = -IB2 = 2 A For BUW13A IC= 8 A , IB1 = -IB2 = 1.6 A Min - Typ 1.2 0.6 0.17 Mx 1.5 1.1 0.25 Unit µs 29/09/2012 COMSET SEMICONDUCTORS 2/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUW13 - BUW13A MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter 0.35 5.35 20.00 19.60 0.95 www.DataSheet.net/ 4.80 Revised August 2012             Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’.


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