New Product
VSSA210
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
• Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DO-214AC (SMA)
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max. 2.0 A 100 V 60 A 0.56 V 150 °C
For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.
MECHANICAL DATA
Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade
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Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Notes (1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area VRRM IF IF
(1) (2)
SYMBOL
VSSA210 V2B 100 2.0
UNIT
V A
1.7 60 - 40 to + 150 A °C
IFSM TJ, TSTG
Document Number: 89404 Revision: 19-Apr-11
For technical questions within your region, please contact one of the following: www.vishay.com
[email protected],
[email protected],
[email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
New Product
VSSA210
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Breakdown voltage Instantaneous forward voltage TEST CONDITIONS IR = 1.0 mA IF = 2.0 A TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C CJ IR (2) SYMBOL VBR VF (1) TYP. 100 (minimum) 0.61 0.56 1.0 0.95 3.5 2.2 175 MAX. 0.70 0.65 150 15 μA mA μA mA pF V UNIT
VR = 70 V Reverse current VR = 100 V Typical junction capacitance 4.0 V, 1 MHz
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RJA (1) RJM (2) VSSA210 135 °C/W 25 UNIT
Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 8 mm x 8 mm copper pad areas; R JM - junction to mount
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ORDERING INFORMATION (Example)
PREFERRED P/N VSSA210-M3/61T VSSA210-M3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.4
1.6
D = 0.5
Average Forward Rectified Current (A)
2.0
1.4
D = 0.8
D = 0.3 D = 0.2
Average Power Loss (W)
1.2 1.0
D = 0.1 D = 1.0
1.6
1.2
0.8 0.6
T
0.8
0.4 0.2
D = tp/T tp
0.4 TM Measured at Terminal 0 0 25 50 75 100 125 150
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 89404
[email protected],
[email protected],
[email protected] Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
datasheet pdf - http://www.DataSheet4U.net/
New Product
VSSA210
Vishay General Semiconductor
10
1000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p
Instantaneous Forward Current (A)
TA = 125 °C 1 TA = 100 °C
Junction Capacitance (pF)
100
TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 TA = 150 °C 1 TA = 125 °C 0.1 TA = 100 °C
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Ambient
100
0.01
10
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0.001
TA = 25 °C
0.0001 10 20 30 40 50 60 70 80 90 100
1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impe.