BUZ71

SEMICONDUCTORS BUZ71 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in switched mode power supplies, motor control, welding, DC-DC & DC-AC converters, and in general purpose switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 14 A, VDD = 25 V, RGS = 25 Ω, L= 30.6 µH, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value 50 14 56 14 6 1 20 0.1 40 -55 to +150 -55 to +150 Unit V A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, junction-case Thermal Resistance, junction-ambient Value 3.1 75 Unit K/W 01/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS BUZ71 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS Ratings Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Test Condition(s) ID= 250 µA, VGS= 0 V ID=1 mA, VGS= VDS VDS= 50 V, VGS= 0 V Tj= 25 °C VDS= 50 V, VGS= 0 V Tj= 125 °C VGS= ...