MOS Transistors. IRF630 Datasheet

IRF630 Transistors. Datasheet pdf. Equivalent


Comset Semiconductors IRF630
SEMICONDUCTORS
IRF630
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed switching,
uninterruptible power supply, motor control, audio amplifiers,
industrial actuators.
DC-DC & DC-AC converters for telecom, industrial and
consumer environment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
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VDS
IDS
IDM
IAR
EAS
EAR
VGS
RDS(on)
PT
tJ
tstg
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Single pulse
ID = 2.4 A, VDD = 50 V, RGS = 25 , L= 56.3 µH, Tj = 25°C
Avalanche Energy, Periodic Limited by Tjmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
Value
200
9
36
9
250
7.4
20
0.4
74
-55 to +150
-55 to +150
Unit
V
A
mJ
V
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
1.7
62
Unit
°C/W
01/10/2012
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IRF630 Datasheet
Recommendation IRF630 Datasheet
Part IRF630
Description N-Channel Enhancement Mode Power MOS Transistors
Feature IRF630; SEMICONDUCTORS IRF630 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plast.
Manufacture Comset Semiconductors
Datasheet
Download IRF630 Datasheet




Comset Semiconductors IRF630
SEMICONDUCTORS
IRF630
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage Current
Drain-Source on Resistance
ID= 250 µA, VGS= 0 V
ID=1 mA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 5.4 A, VGS= 10 V
200 -
23
--
-
4
10
- - 50
- - 100
- 0.35 0.4
V
V
µA
nA
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
REVERSE DIODE
Test Condition(s)
http://www.DataSheet4U.net/
VDS = 2*ID*RDS(on)max
ID= 5 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 100 V, VGS= 10 V
ID= 4.5 A, RGS= 4.7
Min
3
-
-
-
-
-
-
-
Typ Max Unit
4-
540 700
90 120
35 50
10 -
15 -
25 -
15 -
S
pF
ns
Symbol
Ratings
IS
Inverse Diode Continuous
Forward Current.
ISM
Inverse diode direct current,
pulsed.
VSD Inverse Diode Forward voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Condition(s)
TC = 25°C
TC = 25°C
VGS = 0 V, IF = 9 A
VR = 50 V, IF = 9 A
di/dt = 100 A/µs
TC = 150°C
Min Typ Max Unit
- -9
A
- - 36
- -2
- 170 -
V
ns
- 0.95 - µC
MECHANICAL DATA CASE TO-220
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Comset Semiconductors IRF630
SEMICONDUCTORS
IRF630
DIMENSIONS (mm)
Min. Max.
A 9,90 10,30
B 15,65 15,90
C 13,20 13,40
D
6,45
6,65
E
4,30
4,50
F
2,70
3,15
G
2,60
3,00
H 15,75 17.15
L
1,15
1,40
M
3,50
3,70
N-
1,37
P
0,46
0,55
R
2,50
2,70
S
4,98
5,08
T
2.49
2.54
U
0,70
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Gate
Drain
Source
http://www.DataSheet4U.net/
Revised September 2012
         
 
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
 
www.comsetsemi.com
info@comsetsemi.com
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