NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Ratings MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001
Value 60 80 60 80 5.0 8.0 0.1 90 0.515 -65 to +200
Unit V V V A A W W/°C °C
IB=0
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IC(RMS)
@ TC < 25° Derate above 25°C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.94
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
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NPN MJ1000 – MJ1001
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO ICEO IEBO
Ratings
Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current
Test Condition(s)
IC=100 mA, IB=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VBE=5.0 V, IC=0 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000
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Min
60 80 -
Typ
-
Max
500 2.0
Unit
V µA mA
ICER
VCB=60 V, RBE=1.0 kΩ VCB=80 V R =1.0 kΩ Collector-Emitter Leakage BE VCB=60 V Current RBE=1.0 kΩ TC=150°C VCB=80 V RBE=1.0 kΩ TC=150°C Collector-Emitter saturation Voltage (*) Forward Voltage (pulse method) Base-Emitter Voltage (*)
1.0 5.0 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 1000 750 1.8 2.0 V 4.0 2.5 V V mA
IC=3.0 A, IB=2 mA IC=8.0 A, IB=40 mA
VCE(SAT)
VF VBE
IF=3 A IC=3.0 A, VCE=3.0 V VCE=3.0 V, IC=3.0 A
HFE
DC Current Gain (*) VCE=3.0 V, IC=4.0 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
29/10/2012
COMSET SEMICONDUCTORS
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NPN MJ1000 – MJ1001
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30
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Pin 1 : Pin 2 : Case :
Base Emitter Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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29/10/2012 COMSET SEMICONDUCTORS
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