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MJ1000 Dataheets PDF



Part Number MJ1000
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (MJ1000 / MJ1001) Complementary Power Darlingtons
Datasheet MJ1000 DatasheetMJ1000 Datasheet (PDF)

NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current .

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NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 Value 60 80 60 80 5.0 8.0 0.1 90 0.515 -65 to +200 Unit V V V A A W W/°C °C IB=0 http://www.DataSheet4U.net/ IC(RMS) @ TC < 25° Derate above 25°C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.94 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ NPN MJ1000 – MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICEO IEBO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) IC=100 mA, IB=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VBE=5.0 V, IC=0 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 http://www.DataSheet4U.net/ Min 60 80 - Typ - Max 500 2.0 Unit V µA mA ICER VCB=60 V, RBE=1.0 kΩ VCB=80 V R =1.0 kΩ Collector-Emitter Leakage BE VCB=60 V Current RBE=1.0 kΩ TC=150°C VCB=80 V RBE=1.0 kΩ TC=150°C Collector-Emitter saturation Voltage (*) Forward Voltage (pulse method) Base-Emitter Voltage (*) 1.0 5.0 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 1000 750 1.8 2.0 V 4.0 2.5 V V mA IC=3.0 A, IB=2 mA IC=8.0 A, IB=40 mA VCE(SAT) VF VBE IF=3 A IC=3.0 A, VCE=3.0 V VCE=3.0 V, IC=3.0 A HFE DC Current Gain (*) VCE=3.0 V, IC=4.0 A (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 datasheet pdf - http://www.DataSheet4U.net/ NPN MJ1000 – MJ1001 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 http://www.DataSheet4U.net/ Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012             Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.     www.comsetsemi.com 29/10/2012 COMSET SEMICONDUCTORS [email protected] 3|3 datasheet pdf - http://www.DataSheet4U.net/ .


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