TIP150

SEMICONDUCTORS TIP150 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. High voltage, high forward and reverse energy designed for industrial and consumer applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB PT tJ ts tL Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current (1) Base Current Power Dissipation at Case Temperature (2) @ Tmb < 25° Power Dissipation at free Air Temperature (3) Junction Temperature Storage Temperature range Lead Temperature 3.2 mm from case for 10 seconde http://www.DataSheet4U.net/ Value 300 300 8 7 10 1.5 80 Unit V V V A A A Watts 2 -65 to +150 -65 to +150 260 °C 1. This value applies for tp <5ms, duty cycle <10%. 2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance Value 2.5 62.5 Unit °C/W 15/10/2012 09/11/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIP150 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCBO VCEO ICEO ICEOX(sus) IEBO VCE(SAT) VBE(SAT) hFE hfe VF COB Ratings Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (4) Collecto...