BT151-500R THYRISTORS Datasheet

BT151-500R Datasheet, PDF, Equivalent


Part Number

BT151-500R

Description

THYRISTORS

Manufacture

Comset Semiconductors

Total Page 3 Pages
Datasheet
Download BT151-500R Datasheet


BT151-500R
SEMICONDUCTORS
BT151 Series
THYRISTORS
FEATURE
Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
Tstg
Tj
BT151-500R BT151-650R BT151-800Rhttp://www.DataSheet4U.net/
Repetitive peak off-state
voltage
500
650
800
Repetitive peak reverse
voltage
500
650
800
RMS on-state current
12
Average
on-state
current
Non-repetitive peak on-
state current
7.5
100
Peak gate power
5
Average gate power
Storage temperature
range
Operating
junction
temperature
0.5
-45 to +150
110
THERMAL CHARACTERISTICS
Symbol
Rj-mb
RJA
Ratings
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
Value
1.3
60
Unit
V
A
A
A
W
W
°C
°C
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/

BT151-500R
SEMICONDUCTORS
BT151 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VDRM
VRRM
IGT
VGT
IL
IH
ID
IR
VT
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
Reverse current
On-state voltage
BT151-500R
BT151-650R
BT151-800R
BT151-500R
BT151-650R
BT151-800R
VD = 12 V; IT = 100 mA
VD = 12 V; IT = 100 mA
VD = 12 V; IGT = 100 mA
VD = 12 V; IGT = 100 mA
VD = VDRM max; Tj = 125°C
VR = VRRM max; Tj = 125°C
IT = 23 A
http://www.DataSheet4U.net/
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Min Typ Max Unit
500 -
-
650 -
-
800 -
500 -
-
-
V
650 -
-
800 -
-
- - 15 mA
- - 1.5 V
- - 40 mA
- - 20 mA
- - 0.5 mA
- - 0.5 mA
- - 1.75 V
Symbol
Ratings
dVD/dt
Critical rate of rise of
off-state voltage
tgt
Gate controlled
turn-on time
tq
Circuit commutated
Turn-off time
Test Condition(s)
Min Typ Max Unit
VDM = 67% VDRMmax; Tj = 125°C
Exponential waveform; gate
50 130
- V/µs
open circuit
VDM = 67% VDRMmax; Tj = 125°C
Exponential waveform
200 1000 - V/µs
RGK = 100
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
- 2 - µs
VDM = 67% VDRMmax; Tj = 125°C
ITM = 20 A; VR = 25 V
RGK = 100
- 70 - µs
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
26/09/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/


Features SEMICONDUCTORS BT151 Series THYRISTORS FEATURE Glass passivated thyristors in a plastic TO220 package. They are inte nded for use in applications requiring high bidirectional blocking voltage cap ability and high thermal cycling perfor mance. Typical applications include mot or control, industrial and domestic lig hting, heating and static switching. Co mpliance to RoHS. ABSOLUTE MAXIMUM RAT INGS Value BT151-500R BT151-650R BT151- 800R http://www.DataSheet4U.net/ Symbo l Ratings Repetitive peak off-state vo ltage Repetitive peak reverse voltage R MS on-state current Average on-state cu rrent Non-repetitive peak onstate curre nt Peak gate power Average gate power S torage temperature range Operating junc tion temperature Unit VDRM VRRM IT(RM S) IT(AV) ITSM PGM PG(AV) Tstg Tj 500 500 650 650 12 7.5 100 5 0.5 -45 to +1 50 110 800 V 800 A A A W W °C °C TH ERMAL CHARACTERISTICS Symbol R∂j-mb R ∂JA Ratings Thermal resistance junct ion to mounting base Thermal resistance junction to ambient Value ≤ .
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