SILICON CONTROLLED RECTIFIERS
SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS
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Description
SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS Value A
VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL
Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms.
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Symbol
Ratings B C
Unit M S N
V V A A A A W W °C °C °C
D
E
Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 5 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature 3.2 (see Note3) Surge on-state current (see Note4) 20 Peak positive gate...
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