P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING ...
Description
SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS Value A
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Symbol
VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL
Ratings
Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
B
C
D
E
M
S
N
Unit
V V A A A A W W °C °C °C
100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230
29/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S
THERMAL CHARACTERISTICS Symbol
tgt tq R∂JC R∂JA Gate-controlled Turn-on time
Ratings
VAA = 30 V, RL = 6 Ω RGK(eff) = 5 kΩ Vin = 50 V VAA = 30 V, RL = 6 Ω IRM ≈ 8 A
Value
1.75
Unit
µs 7.7 ≤ 3.5 ≤ 62.5...
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