2N6297

2N6294 2N6295 NPN 2N6296 2N6297 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6294 2N6296 60 2N6295 2N6297 80 60 80 5.0 4.0 8.0 80 50 -65 to +200 3.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=50mA, (2N6294, 2N6296) 60 BVCEO IC=50mA, (2N6295, 2N6297) 80 VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=2.0A 750 hFE VCE=3.0V, IC=4.0A 100 hfe VCE=3.0V, IC=1.5A, f=1.0kHz 300 fT VCE=3.0V, IC=1.5A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN types) Cob VCB=10V, IE=0, f=100kHz (PNP types) MAX 0.5 5.0 0.5 2.0 2.0 3.0 4.0 2.8 18K 120 200 UNITS V V V A A mA W °C °C/W UNITS mA mA mA mA V V V V...