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TIC116C Dataheets PDF



Part Number TIC116C
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
Datasheet TIC116C DatasheetTIC116C Datasheet (PDF)

SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse.

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SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value http://www.DataSheet4U.net/ Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings A B C Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Unit M S N V V A A A A W W °C °C °C D E 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Gate-controlled VAA = 30 V, RL = 6 , RGK(eff) = 100 , Vin = 20 V Turn-on time Circuit-communicated VAA = 30 V, RL = 6 , IRM ≈ 10 A Turn-off time Junction to case thermal resistance Junction to free air thermal resistance Value 0.8 Unit µs 11 ≤3 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM IRRM IGT Ratings Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Test Condition(s) VD = Rated VDRM, RGK = 1 kΩ TC = 110°C VR = Rated VRRM, IG = 0 TC = 110°C VAA = 6 V, RL = 100 Ω tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = -40°C VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = 110°C VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA TC = -40°C ITM = 8A (see Note6) VD = Rated VD TC = 110°C http://www.DataSheet4U.net/ Min 0.2 - Typ 5 0.8 100 Max 2 2 20 2.5 1.5 40 Unit mA mA mA VGT Gate trigger voltage V IH Holding current mA 70 1.7 V V/µs VTM dv/dt Peak on-state voltage Critical rate of rise of offstate voltage 29/10/2012 COMSET SEMICONDUCTORS 2|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S Notes: 1. These values apply when the gate-cathode resistance RGK = 1kΩ 2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 4. This value applies for one.


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