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SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• • • • • • 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS Value
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Symbol
VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL
Ratings A B C
Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
Unit M S N
V V A A A A W W °C °C °C
D
E
100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230
29/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S
THERMAL CHARACTERISTICS Symbol
tgt tq R∂JC R∂JA
Ratings
Gate-controlled VAA = 30 V, RL = 6 , RGK(eff) = 100 , Vin = 20 V Turn-on time Circuit-communicated VAA = 30 V, RL = 6 , IRM ≈ 10 A Turn-off time Junction to case thermal resistance Junction to free air thermal resistance
Value
0.8
Unit
µs 11 ≤3 ≤ 62.5 °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM IRRM IGT
Ratings
Repetitive peak off-state current Repetitive peak reverse current Gate trigger current
Test Condition(s)
VD = Rated VDRM, RGK = 1 kΩ TC = 110°C VR = Rated VRRM, IG = 0 TC = 110°C VAA = 6 V, RL = 100 Ω tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = -40°C VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = 110°C VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA TC = -40°C ITM = 8A (see Note6) VD = Rated VD TC = 110°C
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Min
0.2 -
Typ
5 0.8 100
Max
2 2 20 2.5 1.5 40
Unit
mA mA mA
VGT
Gate trigger voltage
V
IH
Holding current
mA 70 1.7 V V/µs
VTM dv/dt
Peak on-state voltage Critical rate of rise of offstate voltage
29/10/2012
COMSET SEMICONDUCTORS
2|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S
Notes: 1. These values apply when the gate-cathode resistance RGK = 1kΩ 2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 4. This value applies for one.