2N6304

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose UHF amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1323.PDF 10-25-99 2N6304 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) 15 30 3.5 Value Typ. Max. 10 Unit Vdc Vdc Vdc nAdc (on) HFE DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) 25 250 - DYNAMIC Symbol fT NF Test Conditions Min. Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (50 Ohms) (IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz) Collector-Base Capacitance (V...