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FCU5N60 Dataheets PDF



Part Number FCU5N60
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V N-Channel MOSFET
Datasheet FCU5N60 DatasheetFCU5N60 Datasheet (PDF)

FCD5N60/FCU5N60 600V N-Channel MOSFET July 2006 SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This ad.

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FCD5N60/FCU5N60 600V N-Channel MOSFET July 2006 SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D G G S D-PAK FCD Series G D S I-PAK FCU Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed http://www.DataSheet4U.net/ Parameter FCD5N60 / FCU5N60 600 4.6 2.9 (Note 1) Unit V A A A V mJ A mJ V/ns W W/°C °C °C 13.8 ± 30 2.9 4.6 5.4 20 54 0.43 -55 to +150 300 (Note 2) (Note 1) (Note 1) (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCD5N60/FCU5N60 2.3 83 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCD5N60/FCU5N60 Rev. A0 datasheet pdf - http://www.DataSheet4U.net/ FCD5N60/FCU5N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCD5N60 FCD5N60 FCU5N60 Device FCD5N60TM FCD5N60TF FCU5N60 Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm -- Tape Width 16mm 16mm -- Quantity 2500 2000 70 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 4.6A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A VDS = 25V, VGS = 0V, f = 1.0MHz http://www.DataSheet4U.net/ Min 600 -------3.0 -(Note 4) Typ -650 0.6 700 -----0.81 3.8 470 250 22 12 32 12 40 47 22 16 2.8 7 Max Units ----1 10 100 -100 5.0 0.95 -600 320 ---30 90 95 55 ---V V V/°C V µA µA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC On Characteristics ---------- Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 4.6A RG = 25Ω (Note 4, 5) Switching Characteristics ----- VDS = 480V, ID = 4.6A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 4.6A VGS = 0V, IS = 4.6A dIF/dt =100A/µs (Note 4) ------ ---295 2.7 4.6 13.8 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCD5N60/FCU5N60 Rev. A0 2 www.fairchildsemi.com datasheet pdf - http://www.DataSheet4U.net/ FCD5N60/FCU5N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics ID, Drain Current [A] 10 1 ID , Drain Current [A] 10 1 150 C o o 10 0 10 0 25 C -55 C * Note 1. VDS = 40V 2. 250µs Pulse Test o 10 -1 * Notes : 1. 250µs Pulse Test o 2. TC = 25 C 10 10 -1 -1 10 0 10 1 .


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