Document
FCD5N60/FCU5N60 600V N-Channel MOSFET
July 2006
SuperFET
FCD5N60 / FCU5N60
600V N-Channel MOSFET Features
• 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D D
G G S
D-PAK
FCD Series
G D S
I-PAK
FCU Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
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Parameter
FCD5N60 / FCU5N60
600 4.6 2.9
(Note 1)
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
13.8 ± 30 2.9 4.6 5.4 20 54 0.43 -55 to +150 300
(Note 2) (Note 1) (Note 1) (Note 3)
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCD5N60/FCU5N60
2.3 83
Unit
°C/W °C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCD5N60/FCU5N60 Rev. A0
datasheet pdf - http://www.DataSheet4U.net/
FCD5N60/FCU5N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCD5N60 FCD5N60 FCU5N60
Device
FCD5N60TM FCD5N60TF FCU5N60
Package
D-PAK D-PAK I-PAK
Reel Size
380mm 380mm --
Tape Width
16mm 16mm --
Quantity
2500 2000 70
Electrical Characteristics
Symbol
Off Characteristics BVDSS ∆BVDSS / ∆TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 4.6A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A VDS = 25V, VGS = 0V, f = 1.0MHz
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Min
600 -------3.0 -(Note 4)
Typ
-650 0.6 700 -----0.81 3.8 470 250 22 12 32 12 40 47 22 16 2.8 7
Max Units
----1 10 100 -100 5.0 0.95 -600 320 ---30 90 95 55 ---V V V/°C V µA µA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
----------
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 4.6A RG = 25Ω
(Note 4, 5)
Switching Characteristics
-----
VDS = 480V, ID = 4.6A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 4.6A VGS = 0V, IS = 4.6A dIF/dt =100A/µs
(Note 4)
------
---295 2.7
4.6 13.8 1.4 ---
A A V ns µC
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCD5N60/FCU5N60 Rev. A0
2
www.fairchildsemi.com
datasheet pdf - http://www.DataSheet4U.net/
FCD5N60/FCU5N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
Figure 2. Transfer Characteristics
ID, Drain Current [A]
10
1
ID , Drain Current [A]
10
1
150 C
o
o
10
0
10
0
25 C -55 C
* Note 1. VDS = 40V 2. 250µs Pulse Test
o
10
-1
* Notes : 1. 250µs Pulse Test o 2. TC = 25 C
10
10
-1
-1
10
0
10
1
.