FCU7N60

FCD7N60/FCU7N60 600V N-Channel MOSFET July 2006 SuperFET FCD7N60 / FCU7N60 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. Rds(on)=0.53Ω Ultra low gate charge (typ. Qg=23nC) Low effective output capacitance (typ. Coss.eff=60pF) 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D G G S D-PAK FCD Series G D S I-PAK FCU Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed http://www.DataSheet4U.net/ Parameter FCD7N60/FCU7N60 600 7 4.4 (Note 1) Unit V A A A V mJ A mJ V/ns W W/°C °C °C 21 ± 30 230 7 8.3 20 83 0.67 -55 to +150 300 (Note 2) (Note 1) (Note 1) (Note 3) Operating and Storage Temperature Range Maximum Lead T...