FCU900N60Z

FCU900N60Z 600V N-Channel MOSFET August 2012 FCU900N60Z 600V N-Channel MOSFET Features 675V @TJ = 150oC Max. RDS(on) = 900mΩ Ultra Low Gate Charge (Typ. Qg = 13nC) Low Effective Output Capacitance (Typ. Coss.eff = 49pF) 100% Avalanche Tested ESD Improved Capacity SuperFET® II Description SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G I-PAK http://www.DataSheet4U.net/ S MOSFET Maximum Ratings TC = Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current 25oC unless otherwise noted* Rating 600 ±20 (f>1Hz) 25oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) ±30 4.5 2.8 13.5 47.5 1 0.52 20 100 52 0.42 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC oC oC Parameter -DC -AC -Continuous (TC = - Pulsed -Continuous (TC = 100oC) Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operat...