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CDBQR0230L

Comchip

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230L (RoHS Device) Io = 200 mA V R = 30 Volts 0402(1005) 0.041(1...


Comchip

CDBQR0230L

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR0230L (RoHS Device) Io = 200 mA V R = 30 Volts 0402(1005) 0.041(1.05) 0.037(0.95) Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.026(0.65) 0.022(0.55) Mechanical data 0.022(0.55) Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any. Weight: 0.001 gram(approx.). 0.018(0.45) 0.012(0.30) Typ. 0.020(0.50) Typ. Dimensions in inches and (millimeter) http://www.DataSheet4U.net/ Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 1 125 -40 +125 +125 V V mA A mW O 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current I F = 200 mA V R = 10 V Conditions Symbol Min Typ Max Unit VF IR 0.5 30 V uA REV:C QW-A1118 Page 1 Comchip Technology CO., LTD. datasheet pdf - http://www.DataSheet4U.net/ SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBQR0230L) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Rever...




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