2N6344

2N6344, 2N6349 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 400 Hz Operation, Consult Factory Device Marking: Logo, Device Type, e.g., 2N6344, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating * Peak Repetitive Off–State Voltage(1) (TJ = –40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344 2N6349 *On–State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) *Peak Non–Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current (TC = +80°C, Pulse Width = 2.0 µs) *Peak Gate Voltage (TC = +80°C, Pulse Width = 2.0 µs) *Operating Junction Temperature Range *Storage Temperatu...