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2N6349 Dataheets PDF



Part Number 2N6349
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Bidirectional Thyristors
Datasheet 2N6349 Datasheet2N6349 Datasheet (PDF)

2N6344, 2N6349 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and .

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2N6344, 2N6349 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in all Four Quadrants • For 400 Hz Operation, Consult Factory • Device Marking: Logo, Device Type, e.g., 2N6344, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating * Peak Repetitive Off–State Voltage(1) (TJ = –40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344 2N6349 *On–State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) *Peak Non–Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current (TC = +80°C, Pulse Width = 2.0 µs) *Peak Gate Voltage (TC = +80°C, Pulse Width = 2.0 µs) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 8.0 4.0 ITSM 100 Amps Amps Value Unit Volts 1 http://onsemi.com TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 4 2 3 TO–220AB CASE 221A STYLE 4 PIN ASSIGNMENT 1 I2t PGM PG(AV) IGM VGM TJ Tstg 40 20 0.5 2.0 10 – 40 to +125 – 40 to +150 A2s Watts Watt 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION Amps Volts °C °C Preferred devices are recommended choices for future use and best overall value. Device 2N6344 2N6349 Package TO220AB TO220AB Shipping 500/Box 500/Box (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 1999 1 March, 2000 – Rev. 1 Publication Order Number: 2N6344/D 2N6344, 2N6349 THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RθJC TL Max 2.2 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS * Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 100°C IDRM, IRRM — — — — 10 2.0 µA mA ON CHARACTERISTICS * Peak On–State Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle " p2%) VTM IGT — 1.3 1.55 Volts mA .


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