Document
2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full–wave silicon gate controlled solid–state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in all Four Quadrants • For 400 Hz Operation, Consult Factory • Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating * Peak Repetitive Off–State Voltage(1) (TJ = –40 to +110°C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344 2N6349 *On–State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C) *Peak Non–Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) *Average Gate Power (TC = +80°C, t = 8.3 ms) *Peak Gate Current (TC = +80°C, Pulse Width = 2.0 µs) *Peak Gate Voltage (TC = +80°C, Pulse Width = 2.0 µs) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 8.0 4.0 ITSM 100 Amps Amps Value Unit Volts 1
http://onsemi.com
TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
MT2 G MT1
4
2
3
TO–220AB CASE 221A STYLE 4
PIN ASSIGNMENT
1 I2t PGM PG(AV) IGM VGM TJ Tstg 40 20 0.5 2.0 10 – 40 to +125 – 40 to +150 A2s Watts Watt 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
Amps Volts °C °C
Preferred devices are recommended choices for future use and best overall value.
Device 2N6344 2N6349
Package TO220AB TO220AB
Shipping 500/Box 500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 1999
1
March, 2000 – Rev. 1
Publication Order Number: 2N6344/D
2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RθJC TL Max 2.2 260 Unit °C/W °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 100°C IDRM, IRRM — — — — 10 2.0 µA mA
ON CHARACTERISTICS
* Peak On–State Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
"
p2%)
VTM IGT
—
1.3
1.55
Volts mA
.