2N6388

® 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium frequency power applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 160 Ω ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I B = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (R BE ≤ 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 80 80 5 10 15 0.25 65 -65 to 150 150 Unit V V V V V A A A W o o C C April 1999 1/4 2N6388 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.92 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO V CE = rated V CEO V CE = 80 V V EB = 5 V I C = 200 mA I C = 200 mA I C = 200 mA IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 1 A IC = 1...