2N6388

www.DataSheet4U.com 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc − 2N6387, 2N6388 Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Pb−Free Packages are Available* DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 2N6387 2N6388 2N6387 2N6388 Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Value 60 80 60 80 5.0 10 15 250 65 0.52 2.0 0.016 −65 to +150 Unit Vdc Vdc Vdc Adc mAdc W W/°C W W/°C °C 2N6387 Symbol RqJC RqJA Max 1.92 62.5 Unit _C/W _C/W 2N6387G 2N6388 2N6388G 4 TO−220AB CASE 221A STYLE 1 1 2N638xG AYWW 2 3 2N638x = Device Code x = 7 or 8 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package TO−220AB TO−220AB (Pb−F...