IXGH85N30C3

Preliminary Technical Information GenX3TM 300V IGBT High Speed PT IGBTs for 50-150kHz switching IXGH85N30C3 VCES IC110 VCE(sat) tfi typ TO-247 AD (IXGH) V V V V A A A A mJ A Features z z z = = ≤ = 300V 85A 1.9V 70ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3.3Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum Ratings 300 300 ±20 ±30 75 85 420 85 400 ICM = 170 333 http://www.DataSheet4U.net/ G C E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector W °C °C °C °C °C Nm/lb.in. g z -55 ... +150 150 -55 ... +150 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque (TO-247) 300 260 1.13/10 6 z High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z z z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 300 2.5 TJ = 125°C 5.0 30 750 ±100 TJ = 125°C 1.64 1.67 1.9 V V µA µA nA V V z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250µA, VGE = 0V = 250µA, VCE = VGE VCE =...