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TLP172A Dataheets PDF



Part Number TLP172A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocoupler Photorelay
Datasheet TLP172A DatasheetTLP172A Datasheet (PDF)

TOSHIBA Photocoupler Photorelay TLP172A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment TLP172A Unit: mm The Toshiba TLP172A consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 4-pin SOP package. This photorelay has higher output current rating than phototransistor-type photocoupler; hence, it is suitable for use as On/Off control for high current. • 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm • Normal.

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TOSHIBA Photocoupler Photorelay TLP172A Telecommunications Control Equipment Data Acquisition System Security Equipment Measurement Equipment TLP172A Unit: mm The Toshiba TLP172A consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 4-pin SOP package. This photorelay has higher output current rating than phototransistor-type photocoupler; hence, it is suitable for use as On/Off control for high current. • 4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm • Normally open (1-form-A) device • Peak off-state voltage: 60 V (min) • Trigger LED current: 3 mA (max) • On-state current: 400 mA (max) • On-state resistance: 2 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1557, File No.E67349 • cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 • VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 1: Anode 2: Cathode 3: Drain 4: Drain 2 3 © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2002-03 2019-06-17 Absolute Maximum Ratings (Ta = 25°C) TLP172A Characteristics Symbol Rating Unit Forward current Forward current derating (Ta ≥ 25°C) Reverse voltage LED Diode power dissipation Diode power dissipation derating (Ta ≥25°C) Junction temperature Off-state output terminal voltage On-state current Forward current derating (Ta ≥ 25°C) Detector Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature Operating temperature Lead soldering temperature (10 s) Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) IF ∆IF/°C VR PD △PD /°C Tj VOFF ION ∆ION/°C PC ΔPC / °C Tj Tstg Topr Tsol BVS 50 −0.5 5 50 -0.5 125 60 400 −4.0 290 −2.9 125 −55 to 125 −40 to 85 260 1500 mA mA/°C V mW mW/°C °C V mA mA/°C mW mW / °C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: LED pins are shorted together. Detector pins are also shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage Forward current On-state current Operating temperature VDD IF ION Topr ― ― 48 V 5 7.5 25 mA ― ― 400 mA −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage LED Reverse current Capacitance Off-state current Detector Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5 V V = 0 V, f = 1 MHz VOFF = 60 V V = 0 V, f = 1 MHz Min Typ. Max Unit 1.0 1.15 1.3 V   10 μA  30  pF   1 μA  130  pF © 2019 2 Toshiba Electronic Devices & Storage Corporation 2019-06-17 Coupled Electrical Characteristics (Ta = 25°C) Characteristics Trigger LED current Return LED current On-state resistance Symbol IFT IFC RON Test Condition ION = 400 mA IOFF = 100 μA ION = 400 mA, IF= 5 mA Isolation Characteristics (Ta = 25°C) Characteristics Capacitance input to output Isolation resistance Isolation voltage Symbol CS RS BVS Test Condition VS = 0 V, f = 1 MHz VS = 500 V, R.H. ≤ 60 % AC, 60 s TLP172A Min Typ. Max Unit  1.6 3 mA 0.1   mA  1 2 Ω Min Typ. Max Unit  0.8  pF 5 × 1010 1014  Ω 1500   Vrms Switching Characteristics (Ta = 25°C) Characteristics Turn-on time Turn-off time Note 2: Switching time test circuit Symbol Test Condition Min Typ. Max Unit tON tOFF RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2)   0.8 2 ms 0.1 0.5 IF 1 2 4 RL VDD VOUT 3 IF VOUT 10% tON 90% tOFF © 2019 3 Toshiba Electronic Devices & Storage Corporation 2019-06-17 Allowable forward current IF (mA) IF – Ta 100 80 60 40 20 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) On-sate current ION (mA) TLP172A ION – Ta 600 500 400 300 200 100 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Forward current IF (mA) 100 Ta = 25°C 30 IF – VF 10 3 1 .


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