NPN EPITAXIAL SILICON TRANSISTOR
ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D
GLBCP56
Description Features
N P N S I L I C O N E P I TA X I A L T ...
Description
ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D
GLBCP56
Description Features
N P N S I L I C O N E P I TA X I A L T R A N S I S T O R
The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53
Package Dimensions
SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings
http://www.DataSheet4U.net/
Unit
Tj TsTG VCBO VCEO VEBO IC PD )
+150 -65 ~ +150 100 80 5 1 1.5
V V V A W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. 100 80 5 63 63 40 100 Typ. Max. 100 100 500 1000 250 -
Unit V V V nA nA mV mV IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=5V, IC =0
Test Conditions
IC=500mA, IB=50mA IC=500mA, VCE=2V, VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA
MHz
VCE=5V, IC=10mA * Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE2
Rank Range 10 63 - 160 16 100 - 250
GLBCP56
1/2
datasheet pdf - http://www.DataSheet4U.net/
ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D
Characteristics Curve
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