PNP SILICON EPITAXIAL TRANSISTOR
CORPORATION
GLBCP69
Description Features
P NP S ILI CO N EP ITAX I AL T RANS ISTO R The GLBCP69 is designed for use in l...
Description
CORPORATION
GLBCP69
Description Features
P NP S ILI CO N EP ITAX I AL T RANS ISTO R The GLBCP69 is designed for use in low voltage and medium power applications. VCEO : -20V IC :1A
ISSUED DATE :2005/07/15 REVISED DATE :
Package Dimensions SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD
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Ratings +150 -65~+150 -25 -20 -5 -1 1.5
Unit
V V V A W
Electrical Characteristics(Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. -25 -20 -5 50 85 60 Typ. 60
,unless otherwise noted) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-1mA, IB=0 V IE=-10uA ,IC=0 -10 uA VCB=-25V, IE=0 -10 uA VEB=-5V, IC=0 -500 mV IC=-1A, IB=-100mA -1.0 V VCE=-1V, IC=-1A VCE=-10V, IC=-5mA 375 VCE=-1V, IC=-500mA VCE=-1V, IC=-1A MHz VCE=-5V, IC=-10mA
*Pulse Test: Pulse Width 380 s, Duty Cycle 2%
1/2
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CORPORATION
Characteristics Curve
ISSUED DATE :2005/07/15 REVISED DATE :
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