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GLBCP69

GTM

PNP SILICON EPITAXIAL TRANSISTOR

CORPORATION GLBCP69 Description Features P NP S ILI CO N EP ITAX I AL T RANS ISTO R The GLBCP69 is designed for use in l...


GTM

GLBCP69

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Description
CORPORATION GLBCP69 Description Features P NP S ILI CO N EP ITAX I AL T RANS ISTO R The GLBCP69 is designed for use in low voltage and medium power applications. VCEO : -20V IC :1A ISSUED DATE :2005/07/15 REVISED DATE : Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD http://www.DataSheet4U.net/ Ratings +150 -65~+150 -25 -20 -5 -1 1.5 Unit V V V A W Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. -25 -20 -5 50 85 60 Typ. 60 ,unless otherwise noted) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-1mA, IB=0 V IE=-10uA ,IC=0 -10 uA VCB=-25V, IE=0 -10 uA VEB=-5V, IC=0 -500 mV IC=-1A, IB=-100mA -1.0 V VCE=-1V, IC=-1A VCE=-10V, IC=-5mA 375 VCE=-1V, IC=-500mA VCE=-1V, IC=-1A MHz VCE=-5V, IC=-10mA *Pulse Test: Pulse Width 380 s, Duty Cycle 2% 1/2 datasheet pdf - http://www.DataSheet4U.net/ CORPORATION Characteristics Curve ISSUED DATE :2005/07/15 REVISED DATE : http://www.DataSheet4U.net/ Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited witho...




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